DocumentCode
2698413
Title
Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si
Author
Androulidaki, M. ; Amimer, K. ; Tsagaraki, K. ; Kayambaki, M. ; Mikroulis, S. ; Constantinidis, G. ; Hatzopoulos, Z. ; Georgakilas, A.
Author_Institution
FORTH/JESL and Univ. Crete
fYear
2000
fDate
2000
Firstpage
9
Lastpage
12
Keywords
Gallium nitride; Material properties; Molecular beam epitaxial growth; Optical films; Plasma materials processing; Plasma properties; Radio frequency; Rough surfaces; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889442
Filename
889442
Link To Document