DocumentCode :
2698413
Title :
Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si
Author :
Androulidaki, M. ; Amimer, K. ; Tsagaraki, K. ; Kayambaki, M. ; Mikroulis, S. ; Constantinidis, G. ; Hatzopoulos, Z. ; Georgakilas, A.
Author_Institution :
FORTH/JESL and Univ. Crete
fYear :
2000
fDate :
2000
Firstpage :
9
Lastpage :
12
Keywords :
Gallium nitride; Material properties; Molecular beam epitaxial growth; Optical films; Plasma materials processing; Plasma properties; Radio frequency; Rough surfaces; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889442
Filename :
889442
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2698413
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