DocumentCode
2698448
Title
Lifetime engineering in high-power devices
Author
Vobecký, J.
Author_Institution
Czech Technical University in Prague
fYear
2000
fDate
2000
Firstpage
21
Lastpage
28
Keywords
Anodes; Buffer layers; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; P-i-n diodes; Power MOSFET; Semiconductor diodes; Spontaneous emission; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889445
Filename
889445
Link To Document