Two-step improvement of electromigration lifetime under high-frequency pulsed conditions

Author

Hiraoka, Kazunori ; Yasuda, Kazumitsu

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1990

fDate

12-13 Jun 1990

Firstpage

120

Lastpage

126

Abstract

Experimental evidence is presented of a marked improvement in electromigration (EM) lifetime under pulsed conditions above 1 MHz. Pulsed stress tests extending over a wide frequency range from 0.01 Hz to 50 MHz show that EM lifetime increases with (duty ratio)^-2 under pulsed conditions in the kilohertz region and that an even further increase occurs in the megahertz region with (duty ratio)^-3. This two-step behavior is analyzed by postulating two distinct relaxation processes. Relaxation times for the two processes are estimated to be about 5 s and 1 μs

Keywords

aluminium alloys; electromigration; failure analysis; life testing; metallisation; silicon alloys; 0.01 Hz to 50 MHz; 1 mus; 5 s; AlSi double level interconnections; duty ratio; electromigration lifetime; high-frequency pulsed conditions; kilohertz region; megahertz region; pulsed stress tests; relaxation processes; relaxation times; two-step behavior; Aluminum; Coaxial cables; Conductors; Current density; Electromigration; Frequency dependence; Laboratories; Large scale integration; Life testing; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127854

Filename

127854