Title :
Simulation of current transport in highly doped semiconductor structures including the tunneling effect
Author :
Racko, J. ; Drobný, V. ; Donoval, D.
Author_Institution :
Slovak University of Technology
Keywords :
Analytical models; Character generation; Doping profiles; Electric variables; Quantum mechanics; Radiative recombination; Semiconductor device doping; Semiconductor diodes; Semiconductor process modeling; Tunneling;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889447
