DocumentCode
2698487
Title
Simulation of current transport in highly doped semiconductor structures including the tunneling effect
Author
Racko, J. ; Drobný, V. ; Donoval, D.
Author_Institution
Slovak University of Technology
fYear
2000
fDate
2000
Firstpage
35
Lastpage
38
Keywords
Analytical models; Character generation; Doping profiles; Electric variables; Quantum mechanics; Radiative recombination; Semiconductor device doping; Semiconductor diodes; Semiconductor process modeling; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889447
Filename
889447
Link To Document