DocumentCode
2698512
Title
Influence of dopant diffusion in sige HBTs on the transit frequency
Author
Gebner, J. ; Kinde, R. ; Schwierz, F.
Author_Institution
Technische Universitat Ilmenau
fYear
2000
fDate
2000
Firstpage
43
Lastpage
46
Keywords
Annealing; Atomic layer deposition; Boron; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Ion implantation; Radio frequency; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889449
Filename
889449
Link To Document