DocumentCode :
2698512
Title :
Influence of dopant diffusion in sige HBTs on the transit frequency
Author :
Gebner, J. ; Kinde, R. ; Schwierz, F.
Author_Institution :
Technische Universitat Ilmenau
fYear :
2000
fDate :
2000
Firstpage :
43
Lastpage :
46
Keywords :
Annealing; Atomic layer deposition; Boron; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Ion implantation; Radio frequency; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889449
Filename :
889449
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2698512
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