A via failure mode in electromigration of multilevel interconnect

Author

Bui, Nguyen D. ; Pham, Van H. ; Yue, John T. ; Wollesen, Don L.

Author_Institution

Adv. Micro Devices, Sunnyvale, CA, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

142

Lastpage

148

Abstract

Via electromigration (EM) performance of (Al-1% Si-0.5% Cu)/(Ti/TiN/Al-1% Si-0.5% Cu) metallization systems has been evaluated for vias with sizes ranging from 1 μm to 2 μm. The electrical open failure mode for vias was observed during EM test at high temperatures and with different current densities. The activation energy and current exponent were obtained, suggesting surface and lattice diffusion as the probable failure mechanisms. A novel observation from this study was the self-healing of failed vias when the failed chains were stored at room or high temperatures. A model for the failure mechanism is proposed

Keywords

aluminium alloys; copper alloys; electromigration; failure analysis; metallisation; scanning electron microscope examination of materials; silicon alloys; titanium; titanium compounds; 1 to 2 micron; AlSiCu-Ti-TiN-AlSiCu; SEM; activation energy; current densities; current exponent; electrical open failure mode; electromigration; failure mechanism model; high temperatures; lattice diffusion; metallization; multilevel interconnect; self-healing; surface diffusion; via failure mode; Aluminum; Current density; Electromigration; Failure analysis; Metallization; Scanning electron microscopy; Stress; Temperature; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127857

Filename

127857