Finite element numerical modeling of currents in VLSI interconnects

Author

Enver, Ahsan ; Clement, J. Joseph

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

149

Lastpage

156

Abstract

Three-dimensional finite-element modeling has been used to simulate density distributions in filled-via structures. Peak current density in a single filled via was studied as a function of the direction of the current path, resistivity of the via-filled material, metal overlap of the via, and misalignment. Simulations were also carried out to examine the effects of the direction of the current flow and the resistivity of the via-fill material on the distribution of current in multiple vias

Keywords

VLSI; current density; current distribution; electromigration; finite element analysis; integrated circuit technology; metallisation; 3D finite element modelling; VLSI interconnects; current density distributions; current flow; electromigration; filled-via structures; metal overlap; misalignment; multiple vias; peak current density; resistivity; via-filled material; Atomic measurements; Current density; Electromigration; Finite element methods; Inorganic materials; Integrated circuit interconnections; Numerical models; Proximity effect; Temperature; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127858

Filename

127858