Step coverage study of PETEOS deposition for intermetal dielectric applications

Author

Yu, D. ; Favreau, D. ; Martin, E. ; Manocha, A.

Author_Institution

AT&T Bell Lab., Allentown, PA, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

166

Lastpage

172

Abstract

A simple one-step plasma-enhanced chemical vapor deposition of TEOS (PETEOS) deposition process for submicron multilevel metallization has been developed. The effect of deposition conditions on PETEOS step coverage and deposition profile is investigated. Two new processes are demonstrated which meet the step coverage requirements for 0.6-μm technology. The first process produces a directional deposition profile using relatively low pressure and high TEOS to oxygen flow. The second process utilizes the addition of NF₃ to achieve a favorable dielectric profile

Keywords

dielectric thin films; metallisation; plasma CVD; semiconductor technology; silicon compounds; 0.6 micron; NF₃; PETEOS deposition; SiO₂; TEOS; deposition profile; dielectric profile; directional deposition profile; intermetal dielectric; one-step plasma-enhanced chemical vapor deposition; step coverage; submicron multilevel metallization; Aluminum; Costs; Dielectric materials; Etching; Metallization; Plasma applications; Plasma materials processing; Silicon compounds; Testing; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127861

Filename

127861