Title :
Dependence of deposition rate on base materials in TEOS/O3 AP CVD
Author :
Fujino, K. ; Nishimoto, Y. ; Tokumasu, N. ; Maeda, Kumiko
Author_Institution :
Semicond. Process Lab., Tokyo, Japan
Abstract :
The dependence of deposition rate and film quality on base materials in TEOS/O3 atmospheric pressure chemical vapor deposition has been studied. Films deposited on thermal oxide at high ozone concentration had lower deposition rate and film quality. The dependence on base materials is caused by surface rate-limited reaction of the CVD, which leads to excellent conformality and low particle generation, although it should be improved for device fabrication. In deposition at low ozone concentration, films had the same deposition rate and film quality as those on silicon. When deposited on silicon, films of higher quality were obtained at high ozone concentration. By a double-layer deposition method (depositing thin film on thermal oxide at low ozone concentration and then depositing at high ozone concentration), films of high quality were deposited. This makes TEOS/O 3 APCVD more versatile in VLSI fabrication
Keywords :
chemical vapour deposition; dielectric thin films; integrated circuit technology; semiconductor technology; silicon compounds; APCVD; O3; Si; SiO2; TEOS/O3; VLSI fabrication; atmospheric pressure chemical vapor deposition; base materials; deposition rate; double-layer deposition method; film quality; surface rate-limited reaction; thermal oxide; Etching; Fabrication; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature; Semiconductor films; Semiconductor materials; Silicon; Surface morphology;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127864
