Title :
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs
Author :
Morassi, L. ; Verzellesi, G. ; Padovani, A. ; Larcher, L. ; Pavan, P. ; Veksler, D. ; Ok, Injo ; Bersuker, G.
Author_Institution :
DISMI, Univ. of Modena & Reggio Emilia, Modena, Italy
Abstract :
Interface-trap effects are analyzed in inversion-type, self-aligned In0.53Ga0.47As and In0.53Ga0.47As/ In0.2Ga0.8As MOSFETs with ALD ZrO2 gate dielectric. Interface-trap densities in the order of 1013 cm-2 eV-1 are required to explain the measured subthreshold slopes. For these Dit values, donor-like interface traps are compatible with threshold-voltage values in the 0-0.15 V range as those observed in these devices. Moreover, the presence of donor-like interface traps can explain the negative VT shift induced by the inclusion of the In0.2Ga0.8As cap layer, as the result of the influence of interface traps located at the In0.2Ga0.8As/ZrO2 interface on the inversion channel forming at the In0.53Ga0.47As/In0.2Ga0.8As interface.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; high-k dielectric thin films; indium compounds; interface states; semiconductor device models; zirconium compounds; ALD ZrO2 gate dielectric; InGaAs-ZrO2; cap layer; donor-like interface traps; high-k dielectric; interface-trap effect analysis; inversion-type MOSFET; negative voltage shift; threshold-voltage value; voltage 0 V to 0.15 V; CMOS technology; Density measurement; Dielectric measurements; High-K gate dielectrics; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; MOSFETs; III-V MOSFETs; InGaAs; high-k dielectric; interface traps; numerical simulation;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488774
