• DocumentCode
    2698725
  • Title

    Contact hole fill with low temperature LPCVD TiN

  • Author

    Raaijmakers, Ivo J. ; Sherman, Arthur

  • Author_Institution
    Philips Components-Signetic, Sunnyvale, CA, USA
  • fYear
    1990
  • fDate
    12-13 Jun 1990
  • Firstpage
    219
  • Lastpage
    225
  • Abstract
    Low-temperature (575°C), low-pressure chemical vapor deposition (LPCVD) of thick (250-800-nm) TiN films was investigated. Submicron contact holes could be filled completely with TiN. The influence of the LPCVD chemistry on the materials properties and conformality of the deposit was addressed. The compatibility of LPCVD TiN contact filling with a TiSi2 salicide process was demonstrated with electrical measurements of junction leakage and contact resistance
  • Keywords
    CVD coatings; contact resistance; nitridation; titanium compounds; 250 to 800 nm; 575 degC; LPCVD; TiN contact filling; conformality; contact resistance; junction leakage; low-pressure chemical vapor deposition; materials properties; salicide process; submicron contact holes; Adhesives; Chemical vapor deposition; Chemistry; Contact resistance; Electrical resistance measurement; Filling; Plasma measurements; Plasma temperature; Silicides; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1990.127869
  • Filename
    127869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2698725