Title :
Contact hole fill with low temperature LPCVD TiN
Author :
Raaijmakers, Ivo J. ; Sherman, Arthur
Author_Institution :
Philips Components-Signetic, Sunnyvale, CA, USA
Abstract :
Low-temperature (575°C), low-pressure chemical vapor deposition (LPCVD) of thick (250-800-nm) TiN films was investigated. Submicron contact holes could be filled completely with TiN. The influence of the LPCVD chemistry on the materials properties and conformality of the deposit was addressed. The compatibility of LPCVD TiN contact filling with a TiSi2 salicide process was demonstrated with electrical measurements of junction leakage and contact resistance
Keywords :
CVD coatings; contact resistance; nitridation; titanium compounds; 250 to 800 nm; 575 degC; LPCVD; TiN contact filling; conformality; contact resistance; junction leakage; low-pressure chemical vapor deposition; materials properties; salicide process; submicron contact holes; Adhesives; Chemical vapor deposition; Chemistry; Contact resistance; Electrical resistance measurement; Filling; Plasma measurements; Plasma temperature; Silicides; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127869
