Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of dislocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.