Cathode sputtered permalloy films of high AMR effect and low coercivity

Author

Stang, G. ; Aigner, P. ; Hudek, P. ; Kostic, I. ; Chabicovsky, R. ; Hauser, H. ; Hochreiter, J. ; Riedling, K.

Author_Institution

Inst. fur Ind. Elektronik & Materialwissenschaften, Tech. Univ. Wien, Austria

fYear

2000

fDate

2000

Firstpage

151

Lastpage

155

Abstract

The anisotropic magnetoresistive (AMR) effect of dc sputtered Ni 81%-Fe 19% films has been increased up to Δρ/ρ=3.93% at 50 nm thickness. Investigations have been concentrated on the influence of the target current, the target-substrate distance, and of the temperature of both target and substrate material. As a function of the applied magnetic bias field, the easy axis coercivity of the permalloy film is between 100 A/m and 200 A/m due to induced anisotropy. The dc magnetisation curves represents an almost ideal Stoner-Wohlfarth behaviour with a hard axis coercivity between 0 and 20 A/m

Keywords

Permalloy; coercive force; magnetic thin films; magnetisation; magnetoresistance; sputtered coatings; 50 nm; Ni₈₁Fe₁₉; Stoner-Wohlfarth behaviour; anisotropic magnetoresistive; applied magnetic bias field; cathode sputtered permalloy films; dc magnetisation curves; easy axis coercivity; hard axis coercivity; high AMR effect; low coercivity; target current; target-substrate distance; Anisotropic magnetoresistance; Cathodes; Coercive force; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetization; Perpendicular magnetic anisotropy; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889471

Filename

889471