Title :
An extended model for soft breakdown in ultra-thin SiO2 films
Author :
Okhonin, S. ; Fazan, P. ; Baskin, E. ; Guegan, G. ; Delenibus, S. ; Martin, F.
Author_Institution :
Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
This paper presents a complete picture of soft breakdown (SBD) including the behavior of conduction and valence band currents. This picture relies on trap-assisted inelastic conduction through deep traps. New electron energy loss data after SBD strongly support the model we also report an energy loss of 0.8 eV for SILC-electrons in 3.6 nm oxide film
Keywords :
conduction bands; deep levels; electric breakdown; electron traps; energy loss of particles; insulating thin films; silicon compounds; valence bands; 0.8 eV; 3.6 nm; SiO2; conduction band currents; deep traps; electron energy loss data; extended model; soft breakdown; trap-assisted inelastic conduction; ultra-thin SiO2 films; valence band currents; Breakdown voltage; Degradation; Electric breakdown; Electron emission; Electron traps; Energy loss; Monitoring; Photonic band gap; Stress; Tunneling;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889475
