• DocumentCode
    2698840
  • Title

    An extended model for soft breakdown in ultra-thin SiO2 films

  • Author

    Okhonin, S. ; Fazan, P. ; Baskin, E. ; Guegan, G. ; Delenibus, S. ; Martin, F.

  • Author_Institution
    Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    This paper presents a complete picture of soft breakdown (SBD) including the behavior of conduction and valence band currents. This picture relies on trap-assisted inelastic conduction through deep traps. New electron energy loss data after SBD strongly support the model we also report an energy loss of 0.8 eV for SILC-electrons in 3.6 nm oxide film
  • Keywords
    conduction bands; deep levels; electric breakdown; electron traps; energy loss of particles; insulating thin films; silicon compounds; valence bands; 0.8 eV; 3.6 nm; SiO2; conduction band currents; deep traps; electron energy loss data; extended model; soft breakdown; trap-assisted inelastic conduction; ultra-thin SiO2 films; valence band currents; Breakdown voltage; Degradation; Electric breakdown; Electron emission; Electron traps; Energy loss; Monitoring; Photonic band gap; Stress; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889475
  • Filename
    889475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2698840