Title :
A novel TCAD-based methodology to minimize the impact of parasitic structures on ESD performance
Author :
Olson, Nicholas ; Boselli, Gianluca ; Salman, Akram ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
During an ESD event, breakdown of a parasitic bipolar transistor can lead to chip failure. For a variety of ESD protection networks, it is demonstrated that TCAD simulations correctly predict the stress level at which failure occurs due to bipolar breakdown. A procedure to characterize the interaction between any two N-type diffusions and the ESD cells to which they are connected is presented.
Keywords :
bipolar transistors; electrostatic discharge; technology CAD (electronics); ESD protection networks; N-type diffusions; TCAD simulation; bipolar breakdown; parasitic bipolar transistor structure; BiCMOS integrated circuits; Bipolar transistors; Clamps; Electric breakdown; Electrostatic discharge; Protection; Silicon; Stress; Testing; Voltage; ESD; Electrostatic Discharge; Parasitic Bipolar; TCAD;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488784
