DocumentCode
2698869
Title
The influence of defect diffusion under electric field on optical and luminescent characteristics of cadmium sulphide
Author
Borkovskaya, L.V. ; Dzhumaev, B.R. ; Khomenkova, L.Yu. ; Korsunskaya, N.E. ; Markevich, I.V.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fYear
2000
fDate
2000
Firstpage
187
Lastpage
190
Abstract
Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impurities, copper diffusion being enhanced perpendicular to the c-axis and silver diffusing faster parallel to the c-axis
Keywords
II-VI semiconductors; cadmium compounds; copper; diffusion; impurity absorption spectra; photoluminescence; silver; CdS:Ag; CdS:Cu; absorption spectra; defect diffusion; diffusion anisotropy; electric field; luminescence; Anodes; Bleaching; Cadmium; Cathodes; Copper; Crystals; Electrodes; Resistance heating; Silver; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location
Smolenice
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889478
Filename
889478
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