• DocumentCode
    2698869
  • Title

    The influence of defect diffusion under electric field on optical and luminescent characteristics of cadmium sulphide

  • Author

    Borkovskaya, L.V. ; Dzhumaev, B.R. ; Khomenkova, L.Yu. ; Korsunskaya, N.E. ; Markevich, I.V.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impurities, copper diffusion being enhanced perpendicular to the c-axis and silver diffusing faster parallel to the c-axis
  • Keywords
    II-VI semiconductors; cadmium compounds; copper; diffusion; impurity absorption spectra; photoluminescence; silver; CdS:Ag; CdS:Cu; absorption spectra; defect diffusion; diffusion anisotropy; electric field; luminescence; Anodes; Bleaching; Cadmium; Cathodes; Copper; Crystals; Electrodes; Resistance heating; Silver; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889478
  • Filename
    889478