On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition

Author

Shrivastava, Mayank ; Bychikhin, S. ; Pogany, D. ; Schneider, Jens ; Baghini, M. Shojaei ; Gossner, Harald ; Gornik, Erich ; Rao, V. Ramgopal

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India

fYear

2010

fDate

2-6 May 2010

Firstpage

480

Lastpage

484

Abstract

We present differences in the ESD failure mechanisms, intrinsic behavior and various phases of filamentation of STI type DeNMOS and DePMOS devices using detailed 3D TCAD simulations, TLP and TIM experiments. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative bipolar triggering and various events during the current filamentation are compared. Measurements show that the absence of base push out in DePMOS device leads to ~2.5X higher I_T2 as compared to DeNMOS.

Keywords

MOSFET; electrostatic discharge; failure analysis; semiconductor device reliability; space charge; 3D TCAD simulations; 3D filamentation; DePMOS devices; ESD failure mechanisms; STI type DeNMOS devices; TIM simulations; TLP simulations; n-type drain extended MOS devices; p-type drain extended MOS devices; power dissipation; regenerative bipolar triggering; space charge; CMOS process; CMOS technology; Doping; Electrostatic discharge; Electrostatic interference; Failure analysis; Fingers; MOS devices; Silicon; Space charge; DEMOS; ESD Failure; Filamentation; space charge buildup;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488785

Filename

5488785