DocumentCode :
2698937
Title :
Growth of polycrystalline diamond-films for low field electron emission
Author :
Malche, V. ; Kromka, A. ; Janík, J. ; Dubravcová, V.
Author_Institution :
Dept. of Microelectron., Slovak Tech. Univ., Bratislava, Slovakia
fYear :
2000
fDate :
2000
Firstpage :
209
Lastpage :
213
Abstract :
The potential for using diamond as a negative electron affinity (NEA) material was recognized by Himpsel et al. in 1979 and makes CVD diamond a promising candidate for cold-cathode applications and field emission displays. The current work shows one promising approach to utilize a double bias-assisted hot filament chemical vapor deposition (HFCVD) method for diamond growth. Selected area deposition of diamond films on tungsten wires is successfully achieved in the HFCVD system. Diamond tungsten wires show good electron field emission properties, that is, emission current density Jc=2000 μA/cm2 (under 23.6 V/μm) and turn on field of F0 =12 V/μm. The effective work function (Φ) estimated by Fowler-Nordheim plot of the I-V characteristics is Φ=0.058 eV. The influence of different growth conditions on film quality has been investigated by micro-Raman measurements and optical microscopy
Keywords :
Raman spectra; chemical vapour deposition; diamond; electron affinity; electron field emission; elemental semiconductors; optical microscopy; semiconductor growth; semiconductor thin films; work function; 0.058 eV; C; CVD diamond; Fowler-Nordheim plot; HFCVD; I-V characteristics; W; cold-cathode applications; double bias-assisted hot filament chemical vapor deposition; effective work function; electron field emission; emission current density; field emission displays; film quality; growth; growth conditions; low field electron emission; micro-Raman measurements; negative electron affinity; optical microscopy; polycrystalline diamond-films; selected area deposition; tungsten wires; turn on field; Conductive films; Electron emission; Microelectronics; Optical films; Optical microscopy; Plasma density; Plasma stability; Substrates; Tungsten; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889483
Filename :
889483
Link To Document :
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