DocumentCode
2699022
Title
Ge-film resistance and Si-based diode temperature microsensors
Author
Boltovets, N.S. ; Kholevchuk, V.V. ; Konakova, R.V. ; Mitin, V.F. ; Venger, E.F.
Author_Institution
State Res. Inst., Kiev, Ukraine
fYear
2000
fDate
2000
Firstpage
235
Lastpage
238
Abstract
New types of miniature temperature sensors based on Ge films and silicon diodes have been developed and produced. The Ge film microthermometers are intended for use at temperatures from 1 to 400 K, and silicon microdiodes cover operating temperature range from 1 to 600 K. The designs of sensitive elements and the miniature package, as well as sensor characteristics, are presented
Keywords
germanium; microsensors; resistance thermometers; semiconductor device measurement; semiconductor device packaging; semiconductor diodes; semiconductor thin films; silicon; temperature sensors; 1 to 600 K; Ge; Ge film microthermometers; Ge-film resistance temperature microsensors; Si; Si-based diode temperature microsensors; miniature package; miniature temperature sensors; sensitive elements; sensor characteristics; Cryogenics; Gold; Magnetic sensors; Microsensors; Packaging; Semiconductor diodes; Semiconductor films; Silicon; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location
Smolenice
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889489
Filename
889489
Link To Document