Title :
Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM
Author :
Sierawski, Brian D. ; Warren, Kevin M. ; Reed, Robert A. ; Weller, Robert A. ; Mendenhall, Marcus M. ; Schrimpf, Ronald D. ; Baumann, Robert C. ; Zhu, Vivian
Author_Institution :
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Predictions of single and multiple cell upsets in a 65 nm bulk CMOS SRAM are presented for the low-energy (<; 10 MeV) portion of the NYC neutron spectrum. Scattering is identified as a significant nuclear mechanism for this regime and the consequence for multiple bit upset is discussed. The contribution is compared to the full spectrum.
Keywords :
CMOS digital integrated circuits; SRAM chips; NYC neutron spectrum; bulk CMOS SRAM; low-energy neutrons; multiple bit upset; size 65 nm; Error correction codes; Field programmable gate arrays; Neutrons; Particle beams; Predictive models; Protons; Random access memory; Scattering; Single event upset; Testing;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488796
