Modeling and characterization of microwave p-i-n photodiode

Author

Chizh, A.L. ; Malyshev, S.A.

Author_Institution

Inst. of Electron., Acad. of Sci., Minsk, Byelorussia

fYear

2000

fDate

2000

Firstpage

239

Lastpage

242

Abstract

A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the influence of an external electric circuit and parasitic elements is presented. S₁₁ parameters of the photodiode are theoretically and experimentally investigated under illumination and in the frequency range up to 4 GHz. The theoretical data well correspond to the measured characteristics of the photodiode. This model can be used in the design of p-i-n photodiodes operating in microwave circuits

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; microwave diodes; microwave photonics; p-i-n photodiodes; semiconductor device measurement; semiconductor device models; 4 GHz; InP-InGaAs-InGaAsP; InP/InGaAs/InGaAsP heterostructure; S₁₁ parameters; external electric circuit; illumination; microwave circuits; microwave p-i-n photodiode; modelling; one-dimensional drift-diffusion model; p-i-n photodiode; parasitic elements; Charge carrier processes; Electron optics; Indium gallium arsenide; Indium phosphide; Lighting; Microwave circuits; Microwave devices; PIN photodiodes; Partial differential equations; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889490

Filename

889490