Title :
Modeling and characterization of microwave p-i-n photodiode
Author :
Chizh, A.L. ; Malyshev, S.A.
Author_Institution :
Inst. of Electron., Acad. of Sci., Minsk, Byelorussia
Abstract :
A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the influence of an external electric circuit and parasitic elements is presented. S11 parameters of the photodiode are theoretically and experimentally investigated under illumination and in the frequency range up to 4 GHz. The theoretical data well correspond to the measured characteristics of the photodiode. This model can be used in the design of p-i-n photodiodes operating in microwave circuits
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; microwave diodes; microwave photonics; p-i-n photodiodes; semiconductor device measurement; semiconductor device models; 4 GHz; InP-InGaAs-InGaAsP; InP/InGaAs/InGaAsP heterostructure; S11 parameters; external electric circuit; illumination; microwave circuits; microwave p-i-n photodiode; modelling; one-dimensional drift-diffusion model; p-i-n photodiode; parasitic elements; Charge carrier processes; Electron optics; Indium gallium arsenide; Indium phosphide; Lighting; Microwave circuits; Microwave devices; PIN photodiodes; Partial differential equations; Poisson equations;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889490
