Title :
MHEMT
-Band Low-Noise Amplifiers
Author :
Karkkainen, Mikko ; Kantanen, Mikko ; Caujolle-Bert, Sylvain ; Varonen, Mikko ; Weber, R. ; Leuther, A. ; Seelmann-Eggebert, Matthias ; Alanne, Ari ; Jukkala, Petri ; Närhi, Tapani ; Halonen, Kari A. I.
Author_Institution :
Dept. of Micro- & Nanosci., Aalto Univ., Espoo, Finland
Abstract :
To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profiling application are reported. The microchips are manufactured in metamorphic high-electron mobility transistor technology having a gate length of 50 nm. The on-wafer measured results show noise figures of 4.4-7.4 dB and 16-25 dB gain at the operating frequencies. In addition, two of the amplifiers were assembled in waveguide packages and the measured results show a gain of 19-20 dB and 7 dB noise figure at both 165 and 183 GHz.
Keywords :
HEMT integrated circuits; MIMIC; atmospheric techniques; low noise amplifiers; millimetre wave amplifiers; millimetre wave field effect transistors; G-band equipment; MHEMT G-band low-noise amplifiers; atmosphere humidity sounding; atmospheric water vapor profiling application; frequency 165 GHz; frequency 183 GHz; gain 16 dB to 25 dB; high-gain amplifier; low-noise amplifier microchips; metamorphic high-electron mobility transistor technology; millimeter-wave integrated circuits; noise figure 4.4 dB to 7.4 dB; size 50 nm; Frequency measurement; Gain; Gain measurement; Noise; Noise measurement; mHEMTs; Low-noise amplifiers (LNAs); MMICs; MODFETs; millimeter-wave integrated circuits; millimeter-wave transistors;
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2014.2327383