• DocumentCode
    2699086
  • Title

    Heterojunction bipolar transistor with diffusive and ballistic electron transport in the base

  • Author

    Horák, M.

  • Author_Institution
    Dept. of Microelectron., Brno Univ. of Technol., Czechoslovakia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    247
  • Lastpage
    250
  • Abstract
    The effect of ballistic transport in the base of the heterojunction bipolar transistor is treated by the modification of the boundary conditions of the standard diffusion equation. The transistor properties are characterised by the yij and hij parameters that are considered as functions of signal frequency and base length. The pure ballistic and pure diffusive electron transport is considered as a special case
  • Keywords
    heterojunction bipolar transistors; high field effects; semiconductor device models; ballistic electron transport; ballistic transport; base; base length; boundary conditions; diffusive electron transport; heterojunction bipolar transistor; signal frequency; standard diffusion equation; Ballistic transport; Boundary conditions; Charge carriers; Current density; Cutoff frequency; Doping; Electron emission; Equations; Heterojunction bipolar transistors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889492
  • Filename
    889492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2699086