Title :
Homogeneity of InGaAs/InP nanostructures
Author :
Piester, D. ; Ivanov, A.A. ; Bakin, A.S. ; Klaffs, T. ; Ursu, M. ; Wehmann, H.-H. ; Schlachetzki, A. ; Kipp, S.
Author_Institution :
Inst. fur Halbleitertech., Tech. Univ. Carolo-Wilhelmina, Braunschweig, Germany
Abstract :
Atomic-force microscopy is applied to wet-chemically etched cleaved facets of InGaAs/InP nanoheterostructures. This technique allows the precise determination of process parameters relevant to advanced quantum devices realized by metal-organic vapor-phase epitaxy (MOVPE). We present data on thickness homogeneity and growth rates. We give evidence for the high quality of InGaAs/InP nanostructures grown by MOVPE
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; gallium arsenide; indium compounds; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; InGaAs-InP; MOVPE; atomic-force microscopy; growth rate; nanoheterostructures; thickness homogeneity; wet-chemically etched cleaved facets; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Measurement techniques; Nanostructures; Quantum cascade lasers; Wet etching;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889493
