Title :
Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts
Author :
Çakar, M. ; Sadlam, M. ; Onganer, Y. ; Horváth, Zs J. ; Türüt, A.
Author_Institution :
Dept. of Chem., Ataturk Univ., Erzurum, Turkey
Abstract :
Metallic polypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV
Keywords :
Schottky barriers; conducting polymers; elemental semiconductors; semiconductor-metal boundaries; silicon; 293 K; Schottky contacts; Si; capacitance-voltage characteristics; current-voltage characteristics; ideality factor; metallic polymer; polypyrrole; potential barrier height; rectifying behaviour; Art; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Polymer films; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889494
