DocumentCode
2699125
Title
Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts
Author
Çakar, M. ; Sadlam, M. ; Onganer, Y. ; Horváth, Zs J. ; Türüt, A.
Author_Institution
Dept. of Chem., Ataturk Univ., Erzurum, Turkey
fYear
2000
fDate
2000
Firstpage
255
Lastpage
256
Abstract
Metallic polypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV
Keywords
Schottky barriers; conducting polymers; elemental semiconductors; semiconductor-metal boundaries; silicon; 293 K; Schottky contacts; Si; capacitance-voltage characteristics; current-voltage characteristics; ideality factor; metallic polymer; polypyrrole; potential barrier height; rectifying behaviour; Art; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Polymer films; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location
Smolenice
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889494
Filename
889494
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