Investigation of the electrical properties of undoped gallium arsenide epitaxial layers

In this investigation we have measured the electron concentration n=7×10¹⁵ cm^-3 in the undoped epitaxial GaAs layer grown on the well conducting GaAs substrate, I-V characteristic resistance of the Schottky junction formed in that layer and we have evaluated layer resistivity ρ=0.2 Ω cm, barrier potential φ=0.785 V, ideality factor η=1.08 and series resistance R_s =5 Ω of the Schottky junction. Then we have measured I-V characteristic between the coplanar ohmic contact formed on the undoped epitaxial GaAs layer grown on SI GaAs substrate and we have evaluated breakdown electric field E_T=1.5 kV/cm, sheet resistivity R _s=10⁹ Ω/0, and layer resistivity ρ=5×10⁴ Ω cm