Title :
Reliability of (100) and (110) oriented single-grain Si TFTs without seed substrate
Author :
Chen, Tao ; Ishihara, Ryoichi ; Beenakker, C.I.M.
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands
Abstract :
We report high performance (100) and (110) oriented single-grain TFTs below 600°C by orientation controlled μ-Czochralski process. Due to surface and in-plane orientation control, the uniformity approaches to the SOI counterpart. Electron mobilities are 732cm2/Vs for (100) and 630cm2/Vs for (110). Devices show stable performance under gate and drain stress respectively. After applying electrical stress on gate and drain for 1000s respectively, the electron mobility has not deteriorated for (100) SG-TFT and (110) SG-TFT.
Keywords :
crystal growth from melt; electron mobility; elemental semiconductors; semiconductor device reliability; silicon; thin film transistors; SOI; Si; drain stress; electrical stress; electron mobility; gate stress; in-plane orientation control; orientation controlled μ-Czochralski process; oriented single-grain Si TFT reliability; surface orientation control; Annealing; Crystallography; Dry etching; Electron mobility; Filters; Nickel; Position control; Stress control; Substrates; Thin film transistors; Location and orientation control; single-grain Si TFT;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488807
