Reliability of (100) and (110) oriented single-grain Si TFTs without seed substrate

Author

Chen, Tao ; Ishihara, Ryoichi ; Beenakker, C.I.M.

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands

fYear

2010

fDate

2-6 May 2010

Firstpage

342

Lastpage

346

Abstract

We report high performance (100) and (110) oriented single-grain TFTs below 600°C by orientation controlled μ-Czochralski process. Due to surface and in-plane orientation control, the uniformity approaches to the SOI counterpart. Electron mobilities are 732cm²/Vs for (100) and 630cm²/Vs for (110). Devices show stable performance under gate and drain stress respectively. After applying electrical stress on gate and drain for 1000s respectively, the electron mobility has not deteriorated for (100) SG-TFT and (110) SG-TFT.

Keywords

crystal growth from melt; electron mobility; elemental semiconductors; semiconductor device reliability; silicon; thin film transistors; SOI; Si; drain stress; electrical stress; electron mobility; gate stress; in-plane orientation control; orientation controlled μ-Czochralski process; oriented single-grain Si TFT reliability; surface orientation control; Annealing; Crystallography; Dry etching; Electron mobility; Filters; Nickel; Position control; Stress control; Substrates; Thin film transistors; Location and orientation control; single-grain Si TFT;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488807

Filename

5488807