Title :
A Raman study of NiOx films for gas sensors applications
Author :
Srnanek, R. ; Hotový, I. ; Malcher, V. ; Vincze, A. ; McPhail, D. ; Littlewood, S.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
NiOx films were prepared by dc reactive magnetron sputtering in an Ar+O2 mixed atmosphere. These films were investigated by Raman spectroscopy and SIMS. It was confirmed that as we increased the ratio of oxygen in the oxygen/ argon mixture to 30-40%, the composition of the layers approached the Ni2O3 composition. Annealing of the layers also led to a change in composition from the nearly perfect (NiO) to a stoichiometry with an excess of O2(~Ni2O3)
Keywords :
Raman spectra; annealing; gas sensors; nickel compounds; secondary ion mass spectra; semiconductor thin films; sputtered coatings; stoichiometry; Ni2O3; NiO; NiOx films; Raman spectroscopy; SIMS; dc reactive magnetron sputtering; gas sensors applications; stoichiometry; Annealing; Argon; Chemical sensors; Electrodes; Gas detectors; Optical films; Phonons; Semiconductor films; Sputtering; Substrates;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889506
