Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology

Author

Pae, Sangwoo ; Ashok, Ashwin ; Choi, Jingyoo ; Ghani, Tahir ; He, Jun ; Lee, Seok-Hee ; Lemay, Karen ; Liu, Mark ; Lu, Ryan ; Packan, Paul ; Parker, Chris ; Purser, Richard ; Amour, Anthony St ; Woolery, Bruce

Author_Institution

Intel Corp., Ltd. Q&R, Hillsboro, OR, USA

fYear

2010

fDate

2-6 May 2010

Firstpage

287

Lastpage

292

Abstract

High-K (HK) and Metal-Gate (MG) transistor reliability is very challenging both from the standpoint of introduction of new materials and requirement of higher field of operation for higher performance. In this paper, key and unique HK+MG intrinsic transistor reliability mechanisms observed on 32nm logic technology generation is presented. We´ll present intrinsic reliability similar to or better than 45nm generation.

Keywords

field effect transistors; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; transistor-transistor logic; TDDB; field effect transistors; high-k transistor reliability; metal-gate logic transistor reliability; size 32 nm; time dependent dielectric breakdown; Capacitive sensors; Electric breakdown; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Logic; MOS devices; Materials reliability; Silicon germanium; Tunneling; Burn-in; TDDB and BTI; high-k dielectrics; metal-gate transistor; process charging;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488814

Filename

5488814