DocumentCode
2699431
Title
Explosion phenomenon of high resistance via during TEM sample preparation using FIB
Author
Liu, Pan ; Tee, Irene ; Seah, Soo Sien ; Soo, Chi Wen ; Chen, Ye ; Mo, Zhi Qiang
Author_Institution
Failure Anal. Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fYear
2010
fDate
2-6 May 2010
Firstpage
277
Lastpage
281
Abstract
High-resistance via explosion is a new damage phenomenon which is induced during TEM sample preparation using FIB. Two methods that will prevent this phenomenon are introduced. In practice, these methods have been effective in avoiding high-resistance via explosion.
Keywords
electric breakdown; electric resistance measurement; focused ion beam technology; semiconductor device reliability; transmission electron microscopy; FIB; TDDB; TEM sample preparation; damage phenomenon; focused ion beam technology; high resistance explosion; resistance measurement methodology; semiconductor manufacturing reliability test; time dependent dielectric breakdown; Amorphous materials; Copper; Electron beams; Explosions; Failure analysis; Ion beams; Milling machines; Production; Testing; Wood industry; EM; FIB; High resistance; TEM sample preparation; Via explosion;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488816
Filename
5488816
Link To Document