DocumentCode :
2699475
Title :
A new method for improving performances of a polycrystalline solar cell
Author :
Kolsi, Sami ; Ben Amar, Mohamed
Author_Institution :
Dept. of Electr. Eng., Univ. of Sfax, Sfax, Tunisia
fYear :
2015
fDate :
24-26 March 2015
Firstpage :
1
Lastpage :
6
Abstract :
In this paper, we present a two-dimensional polycrystalline solar cell model to determine the parameters of the cell, such as the photocurrent, the dark current and the conversion efficiency. In this model, we consider an exponential doping profile of the p-region of the cell and hence the onset of an electric field in this region in order to reduce the minority carrier recombination at grain boundary and at rear contact. Consequently, this improved conversion efficiency of the cell. In order to optimize conversion efficiency, the presented model is implemented through a simulation program while varying thickness and doping concentration in the p-region of the cell. Compared with the case of Dirac´s function doping profile, the conversion efficiency is maximal in the case of an exponential doping profile.
Keywords :
doping profiles; electric fields; grain boundaries; solar cells; electric field; exponential doping profile; grain boundary; minority carrier recombination reduction; two-dimensional polycrystalline solar cell performance improvement; Dark current; Doping profiles; Mathematical model; Photovoltaic cells; Semiconductor process modeling; Space charge; conversion efficiency; doping profile; optimization; polycystalline solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Renewable Energy Congress (IREC), 2015 6th International
Conference_Location :
Sousse
Type :
conf
DOI :
10.1109/IREC.2015.7110856
Filename :
7110856
Link To Document :
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