Determination of the local electric field strength by Energy dispersive Photon Emission Microscopy

Author

Geinzer, T. ; Heiderhoff, R. ; Phang, J.C.H. ; Balk, L.J.

Author_Institution

Dept. of Electron., Univ. of Wuppertal, Wuppertal, Germany

fYear

2010

fDate

2-6 May 2010

Firstpage

271

Lastpage

276

Abstract

Energy-dispersive Photon Emission Microscopy (PEM) allows the local electron temperature distribution to be characterized with high accuracy and sensitivity. The suitability and potential of this new technique for failure analysis and reliability investigation of semiconductor devices are demonstrated by the spatially resolved analysis of non-uniform breakdowns. With state-of-the-art devices in nanometer dimensions the charge carrier transport is analyzed in order to determine the electric field strength distribution.

Keywords

electric field measurement; failure analysis; photoelectron microscopy; semiconductor device reliability; charge carrier transport; energy dispersive PEM; energy dispersive photon emission microscopy; failure analysis; local electric field strength distribution; local electron temperature distribution; nonuniform breakdown spatial analysis; semiconductor device reliability; state-of-the-art device; Dispersion; Electric breakdown; Electron emission; Electron microscopy; Energy resolution; Failure analysis; Semiconductor device reliability; Semiconductor devices; Spatial resolution; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488819

Filename

5488819