Title :
Nature of the red photoluminescence in porous silicon
Author :
Torchynska, T.V. ; Bacarril-Espinosa, G. ; Ita-Torre, A. ; Gomez, J.Palacios ; Korsunska, N.E. ; Khomenkova, L.Yu. ; Bulakh, B.M. ; Scherbina, L.V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Photoluminescence and its excitation, Raman scattering, as well as Atomic Force Microscopy investigations were used to study the photoluminescence mechanism in P-Si. The dependencies of all characteristics on P-Si preparation regimes, the duration of the electrochemical etching process, have been investigated. The influence on the PL spectra of the variation of the excitation light wavelength and storage in vacuum were studied as well. We have shown that the red luminescence band can be decomposed into three elementary bands
Keywords :
Raman spectra; atomic force microscopy; elemental semiconductors; etching; photoluminescence; porous semiconductors; silicon; 1.7 to 2.1 eV; PL spectra; Raman scattering; Si; Si-SiO; atomic force microscopy; electrochemical etching process; excitation light wavelength; photoluminescence mechanism; porous silicon; preparation regime; red photoluminescence; vacuum storage; Atomic force microscopy; Etching; Infrared detectors; Infrared spectra; Luminescence; Photoluminescence; Physics; Raman scattering; Silicon; Spectroscopy;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889517
