DocumentCode
2699567
Title
Investigation of interface formation and charge properties of MIS structures Al-DyxOy-n-InP(100)
Author
Babushkina, N.V. ; Malyshev, S.A. ; Bykova, L.N. ; Romanova, L.I.
Author_Institution
Inst. of Electron., Acad. of Sci., Minsk, Byelorussia
fYear
2000
fDate
2000
Firstpage
359
Lastpage
362
Abstract
Al-DyxOy-n-InP (100) structures with dysprosium oxide films DyxOy of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the DyxOy-n-InP (100) interface charge properties are discussed. InP MIS structures with low effective charge density Nss~1011 cm-2, interface trap density Nit~3·1011 cm-2 eV -1 and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyPxOy transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET´s
Keywords
MIS structures; MISFET; aluminium; capacitance; dysprosium compounds; indium compounds; interface states; oxidation; 30 to 70 nm; Al-DyO-InP; Al/DyxOy/n-InP(100) MIS structures; DyPxOy transition layer formation; InP; InP MISFET; capacitance-voltage characteristic hysteresis; effective charge density; film formation conditions; interface charge properties; interface formation; interface trap density; oxidation temperature; Cameras; Capacitance-voltage characteristics; Indium phosphide; Insulation; Mercury (metals); Metal-insulator structures; Oxidation; Semiconductor films; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location
Smolenice
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889520
Filename
889520
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