Title :
Investigation of interface formation and charge properties of MIS structures Al-DyxOy-n-InP(100)
Author :
Babushkina, N.V. ; Malyshev, S.A. ; Bykova, L.N. ; Romanova, L.I.
Author_Institution :
Inst. of Electron., Acad. of Sci., Minsk, Byelorussia
Abstract :
Al-DyxOy-n-InP (100) structures with dysprosium oxide films DyxOy of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the DyxOy-n-InP (100) interface charge properties are discussed. InP MIS structures with low effective charge density Nss~1011 cm-2, interface trap density Nit~3·1011 cm-2 eV -1 and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyPxOy transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET´s
Keywords :
MIS structures; MISFET; aluminium; capacitance; dysprosium compounds; indium compounds; interface states; oxidation; 30 to 70 nm; Al-DyO-InP; Al/DyxOy/n-InP(100) MIS structures; DyPxOy transition layer formation; InP; InP MISFET; capacitance-voltage characteristic hysteresis; effective charge density; film formation conditions; interface charge properties; interface formation; interface trap density; oxidation temperature; Cameras; Capacitance-voltage characteristics; Indium phosphide; Insulation; Mercury (metals); Metal-insulator structures; Oxidation; Semiconductor films; Substrates; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889520
