DocumentCode :
2699580
Title :
Accelerated testing of RF-MEMS contact degradation through radiation sources
Author :
Tazzoli, A. ; Barbato, M. ; Giliberto, V. ; Monaco, G. ; Gerardin, S. ; Nicolosi, P. ; Paccagnella, A. ; Meneghesso, G.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
246
Lastpage :
251
Abstract :
This work aims to propose a novel method to accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar degradation in electrical performances. Electrical measurements, RF simulations, and AFM analysis of surface roughness were carried out to verify the proposed method.
Keywords :
atomic force microscopy; life testing; microswitches; surface roughness; AFM analysis; RF-MEMS contact degradation; accelerated testing; radiation exposure; radiation sources; surface roughness; Acceleration; Contacts; Degradation; Electric variables measurement; Life estimation; Protons; Radio frequency; Radiofrequency microelectromechanical systems; Stress; Switches; RF-MEMS; accelerated testing; radiation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488823
Filename :
5488823
Link To Document :
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