Title :
Quantum Dots and Nanowires for Optoelectronic Device Applications
Author :
Gao, Q. ; Kim, Y. ; Joyce, H.J. ; Lever, P. ; Mokkapati, S. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; ground states; indium compounds; nanowires; optical fabrication; quantum dot lasers; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; GaAs; InGaAs; diffusion length; ground-state lasing; metal-organic chemical vapour deposition; quantum dots; quantum nanowires; selective area epitaxy; Chemical lasers; Chemical vapor deposition; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Nanowires; Optoelectronic devices; Quantum dot lasers; Quantum dots; Substrates; InGaAs; lasers; nanowire; quantum dots; selective area epitaxy;
Conference_Titel :
Transparent Optical Networks, 2006 International Conference on
Conference_Location :
Nottingham
Print_ISBN :
1-4244-0235-2
Electronic_ISBN :
1-4244-0236-0
DOI :
10.1109/ICTON.2006.248327
