Title :
The ohmic contacts on the layers for gas sensors
Author :
Machac, Pavel ; Myslik, V.
Abstract :
This paper is concerned with the deposition of semiconductor layers by laser ablation, the preparation of ohmic contacts, and the application of these layers for gas sensors. A new test contact pattern for contact resistance measurement is proposed. The contact structure has a great influence on measurement accuracy. The specific contact resistance of all samples is improved by annealing, the optimal values of the annealing temperature are in the range of 550-750°C. The Pt/Sb metallisation does not improve contact properties
Keywords :
contact resistance; electric resistance measurement; gas sensors; indium compounds; iron compounds; ohmic contacts; pulsed laser deposition; rapid thermal annealing; semiconductor device metallisation; semiconductor materials; tin compounds; titanium compounds; 550 to 750 C; Fe2O3; In2O3; Pt-Sb; Pt/Sb metallisation; RTA; SnO2; TiO2; annealing temperature; contact resistance measurement; laser ablation; measurement accuracy; ohmic contacts; oxide semiconductor gas sensors; semiconductor layer deposition; specific contact resistance; test contact pattern; Annealing; Contact resistance; Electrical resistance measurement; Gas detectors; Gas lasers; Laser ablation; Ohmic contacts; Semiconductor lasers; Temperature distribution; Testing;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889525
