Intersubband absorption in δ-doped GaInAs-InP multi quantum wells

Author

Klaffs, T. ; Ivanov, A.A. ; Bakin, A.S. ; Piester, D. ; Ursu, M. ; Schlachetzki, A. ; Hvozdara, L. ; Strasser, G. ; Güttler, B.

Author_Institution

Inst. fur Halbleitertech., Tech. Univ. Braunschweig, Germany

fYear

2000

fDate

2000

Firstpage

383

Lastpage

386

Abstract

We report on intersubband absorption in lattice-matched Ga_0.47In_0.53As multi quantum well structures. Four δ-doped samples were grown by metalorganic vapour-phase epitaxy, the well-thickness varying between 5 and 11 nm. Experimental results are presented for bound-to-bound and bound-to-continuum transitions. The measured intersubband transition energies are in very good agreement with an effective-mass-approximation model including nonparabolicity effects

Keywords

Fourier transform spectra; III-V semiconductors; MOCVD; band structure; effective mass; gallium arsenide; indium compounds; infrared spectra; semiconductor quantum wells; vapour phase epitaxial growth; δ-doped GaInAs-InP multi quantum wells; 5 to 11 nm; FTIR absorption spectra; Ga_0.47In_0.53As-InP; bound-to-bound transitions; bound-to-continuum transitions; effective-mass-approximation model; intersubband absorption; intersubband transition energies; lattice-matched Ga_0.47In_0.53As MQW; metalorganic vapour-phase epitaxy; nonparabolicity effects; well-thickness; Absorption; Electrons; Energy measurement; Epitaxial growth; Epitaxial layers; Indium phosphide; Molecular beam epitaxial growth; Quantum cascade lasers; Quantum well devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889526

Filename

889526