• DocumentCode
    2699665
  • Title

    LEAP: Layout Design through Error-Aware Transistor Positioning for soft-error resilient sequential cell design

  • Author

    Hsiao-Heng Kelin Lee ; Lilja, K. ; Bounasser, M. ; Relangi, Prasanthi ; Linscott, Ivan R. ; Inan, Umran S. ; Mitra, Subhasish

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2010
  • fDate
    2-6 May 2010
  • Firstpage
    203
  • Lastpage
    212
  • Abstract
    This paper presents a new layout design principle called LEAP which is an acronym for Layout Design through Error-Aware Transistor Positioning. This principle extends beyond traditional layout techniques, such as node separation, and significantly improves the soft error resilience of digital circuits with negligible performance cost. In this study, we applied the LEAP technique to the Dual Interlocked Storage Cell (DICE) and designed a new sequential element called LEAP-DICE. This element retains the circuit topology and transistor sizing of DICE but has a new layout based on the LEAP principle. Radiation experiments using an 180nm CMOS test chip demonstrate that our LEAP-DICE flip-flop encounters 5X fewer errors on average compared to our reference DICE flip-flop, and 2,000X fewer errors on average compared to a conventional D-flip-flop. Our LEAP-DICE flip-flop imposes negligible power and delay costs and 40% flip-flop-level area costs compared to our reference DICE flip-flop.
  • Keywords
    CMOS digital integrated circuits; flip-flops; integrated circuit layout; network topology; sequential circuits; CMOS test chip; D-flip-flop; LEAP-DICE flip-flop; circuit topology; digital circuits; dual interlocked storage cell; error-aware transistor positioning; layout design; sequential element; size 180 nm; soft-error resilient sequential cell design; transistor sizing; Circuit testing; Computer errors; Costs; Delay; Flip-flops; Latches; Protons; Resilience; Robustness; Single event upset; LEAP; dual interlocked storage cell (DICE); flip-flop; layout; multiple bit upset (MBU) latch; proton irradiation; single event multiple upset (SEMU); single event upset (SEU); soft error;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488829
  • Filename
    5488829