Title :
Influence of substrate preparation on fracture properties of InP cantilevers
Author :
Behrens, I. ; Peiner, E. ; Bakin, A.S. ; Schlachetzki, A.
Author_Institution :
Inst. fur Halbleitertech., Tech. Univ. Braunschweig, Germany
Abstract :
In this study we investigate the influence of the substrate preparation on the mechanical properties of indium phosphide layers used for hetero-micromachining. These layers were grown on silicon by metalorganic vapour-phase epitaxy. Exploiting the etching selectivity of indium phosphide versus silicon we realized freestanding cantilevers oriented in ⟨100⟩ and ⟨110⟩ crystal directions. Fracture-stress measurements revealed that cantilevers fabricated from a layer grown on structured substrates show a lower value compared to those grown on unstructured silicon
Keywords :
III-V semiconductors; MOCVD; etching; fracture; indium compounds; micromachining; micromechanical resonators; semiconductor epitaxial layers; vapour phase epitaxial growth; InP; InP cantilevers; Si; Si substrate; etching selectivity; fracture properties; fracture-stress measurements; freestanding cantilevers; hetero-micromachining; metalorganic vapour-phase epitaxy; structured substrates; substrate preparation; Epitaxial growth; Epitaxial layers; Etching; Hidden Markov models; Indium phosphide; Mechanical sensors; Micromachining; Silicon; Substrates; Surface cracks;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889527
