Photoelectric properties of Schottky barriers based on porous silicon

Author

Blynski, V.I. ; Lazarouk, S.K. ; Malyshev, S.A. ; Matskevich, T.P.

Author_Institution

Inst. of Electron., Acad. of Sci., Minsk, Byelorussia

fYear

2000

fDate

2000

Firstpage

399

Lastpage

402

Abstract

Spectral and dynamic characteristics of Al-porous Si structure prepared by electrochemical anodizing of monocrystalline silicon in the transient mode (ρ=0.1-0.01 Ohm·cm) have been studied. It is found that for blocking voltage corresponding to current above threshold flowing through the structure there occurs amplification of the photocurrent. The photocurrent amplification process is explained by light-induced modulation of porous Si resistance

Keywords

Schottky barriers; aluminium; anodisation; elemental semiconductors; photoconductivity; photovoltaic effects; porous semiconductors; silicon; 0.1 to 0.01 ohmcm; Al-Si; Al-porous Si structure; Schottky barriers; blocking voltage; dynamic characteristics; electrochemical anodization; light-induced modulation; photocurrent amplification; photoelectric properties; photovoltaic mode; spectral characteristics; transient mode; Aluminum; Optical films; Photoconductivity; Photovoltaic systems; Schottky barriers; Silicon; Solar power generation; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889530

Filename

889530