Title :
Photoelectric properties of Schottky barriers based on porous silicon
Author :
Blynski, V.I. ; Lazarouk, S.K. ; Malyshev, S.A. ; Matskevich, T.P.
Author_Institution :
Inst. of Electron., Acad. of Sci., Minsk, Byelorussia
Abstract :
Spectral and dynamic characteristics of Al-porous Si structure prepared by electrochemical anodizing of monocrystalline silicon in the transient mode (ρ=0.1-0.01 Ohm·cm) have been studied. It is found that for blocking voltage corresponding to current above threshold flowing through the structure there occurs amplification of the photocurrent. The photocurrent amplification process is explained by light-induced modulation of porous Si resistance
Keywords :
Schottky barriers; aluminium; anodisation; elemental semiconductors; photoconductivity; photovoltaic effects; porous semiconductors; silicon; 0.1 to 0.01 ohmcm; Al-Si; Al-porous Si structure; Schottky barriers; blocking voltage; dynamic characteristics; electrochemical anodization; light-induced modulation; photocurrent amplification; photoelectric properties; photovoltaic mode; spectral characteristics; transient mode; Aluminum; Optical films; Photoconductivity; Photovoltaic systems; Schottky barriers; Silicon; Solar power generation; Substrates; Temperature; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889530
