Title :
A single-layer metal-electrode CCD image sensor
Author :
Nakamura, N. ; Tanaka, N. ; Endoh, N. ; Matsunaga, Y. ; Sasaki, M. ; Yamashita, Hiromasa ; Ohsawa, S. ; Manabe, S. ; Yoshida, O.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A small pixel is required to reduce CCD image sensor chip size for commercial application. However, the shrinkage of pixel size adversely affects such characteristics as smear noise, sensitivity and charge-handling capability. Furthermore, a conventional overlapping double-layer polysilicon (polySi) electrode is complicated and difficult to fabricate for CCD image sensors. For process step simplicity of the transfer electrodes, aiming at low cost sensors and the smear noise reduction, a single-layer metal-electrode CCD image sensor is introduced.
Keywords :
CCD image sensors; semiconductor device noise; sensitivity; CCD image sensor; charge-handling capability; chip size; pixel size; sensitivity; single-layer metal-electrode CCD; smear noise; transfer electrodes; Boron; Charge coupled devices; Charge-coupled image sensors; Electrodes; Implants; Insulation; Ion implantation; Silicides; Tungsten; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2495-1
DOI :
10.1109/ISSCC.1995.535531
