Coordinate sensitive photodetectors based on InGaAs/InP heterostructures

Author

Budeanu, E. ; Grozescu, I. ; Purica, M. ; Rusu, E. ; Slobodchikov, S.V.

Author_Institution

Inst. of Appl. Phys., Kishinev, Moldova

fYear

2000

fDate

2000

Firstpage

403

Lastpage

406

Abstract

The dependence of the longitudinal photo-e.m.f. in In_0.53Ga_0.47As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V_phl=f(x) has been observed and the V_phl temperature dependence in the 100-300 K range is determined by the carrier mobility change. A quadrant p-i-n photodiode based on an InP/InGaAs/InP heterostructure was fabricated and its electrical characteristics studied. The photodetector shows wide spectral characteristics (0.9-1.7 μm) with a responsivity of each element of 0.62 A/W and a slope of the inversion characteristics of K=(0.8-1.0) 10 ³ V/W.mm

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; infrared detectors; p-i-n photodiodes; p-n heterojunctions; photoelectromagnetic effects; 0.9 to 1.7 mum; 100 to 300 K; In_0.53Ga_0.47As p-n junction; In_0.53Ga_0.47As-InP; InGaAs/InP heterostructures; InP/InGaAs/InP heterostructure; carrier mobility change; coordinate sensitive photodetectors; electrical characteristics; inversion characteristics slope; linear dependence; longitudinal photo-EMF; quadrant p-i-n photodiode; responsivity; temperature dependence; wide spectral characteristics; Chemical elements; Etching; Indium gallium arsenide; Indium phosphide; Lighting; P-i-n diodes; P-n junctions; PIN photodiodes; Photodetectors; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889531

Filename

889531