Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode

Author

Riedlberger, E. ; Keller, R. ; Reisinger, H. ; Gustin, W. ; Spitzer, A. ; Stecher, M. ; Jungemann, C.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2010

fDate

2-6 May 2010

Firstpage

175

Lastpage

181

Abstract

Hot carrier degradation is critical for LDMOS transistors especially in applications where inductive loads are repetitively switched. In this work, a model for predicting the hot carrier degradation of an LDMOS in dynamic operation conditions is developed and verified for a device driving an inductive load in repetitive clamping mode. Device simulations are performed using the hydrodynamic model. Based on these simulations the physical mechanism of hot carrier degradation is investigated. The results are verified experimentally by photon-emission microscopy. Monte-Carlo simulation delivers profound insight into the spatial and energy distribution of the carriers impinging on the Si/SiO₂-interface.

Keywords

MOSFET; Monte Carlo methods; elemental semiconductors; hot carriers; photoluminescence; semiconductor device models; semiconductor device reliability; silicon; silicon compounds; LDMOS transistors; Monte-Carlo simulation; Si-SiO₂; carrier impinging; device simulations; energy distribution; hot carrier degradation prediction model; hydrodynamic model; lateral DMOS transistor lifetime modelling; photon-emission microscopy; repetitive clamping mode; Acceleration; Clamps; Degradation; Hot carriers; Microelectronics; Predictive models; Qualifications; Stress; Temperature; Vehicle dynamics; LDMOS; clamping; hot carrier degradation; hot carrier stress; inductance; inductive load; model; switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488833

Filename

5488833