Long wavelength (1.02-1.03 μm) InGaAs/GaAs lasers fabricated by MBE

Author

Piwonski, T. ; Sajewicz, P. ; Kubica, J.M. ; Reginski, K. ; Mroziewicz, B. ; Bugajski, M.

Author_Institution

Inst. of Electron. Technol., Warsaw, Poland

fYear

2000

fDate

2000

Firstpage

415

Lastpage

420

Abstract

The operation of InGaAs/GaAs SCH SQW lasers emitting at the wavelength 1.02-1.03 μm, fabricated by MBE technology, is reported. Longer wavelength of emission was achieved by applying high indium content in the active region. The paper presents characteristics of fabricated structures measured at room temperature (T=300 K) under pulsed operation. The results are promising and give hope for fabricating structures emitting at 1.06 μm, which in some applications could replace diode pumped Nd:YAG lasers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; 1.02 to 1.03 mum; 1.02-1.03 μm; 300 K; InGaAs-GaAs; InGaAs/GaAs SCH SQW lasers; MBE fabrication; active region; high indium content; long wavelength lasers; pulsed operation; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Lattices; Optical design; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889534

Filename

889534