Title :
Three-dimensional simulation of complex semiconductor device structures
Author :
Burgler, J. ; Conti, P. ; Heiser, G. ; Paschedag, S. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
An overview is presented of the status of a project concerned with multidimensional numerical simulations, especially the three-dimensional simulation of complex semiconductor device structures. The authors summarize the major points of their approach to the important aspects of three-dimensional simulation, including grid generation and adaptation, the spatial discretization, and the numerical aspects of solving the nonlinear and linear systems of equations involved. Several typical results illustrate possible applications of this modeling tool
Keywords :
semiconductor device models; simulation; 3D modelling; complex semiconductor device structures; grid adaptation; grid generation; linear equations; modeling tool; multidimensional numerical simulations; nonlinear equations; spatial discretization; three-dimensional simulation; Analytical models; Circuit simulation; Integrated circuit modeling; Iterative algorithms; Linear systems; Nonlinear equations; Numerical simulation; Semiconductor devices; Semiconductor process modeling; Software packages;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68593