Three-dimensional simulation of complex semiconductor device structures

Author

Burgler, J. ; Conti, P. ; Heiser, G. ; Paschedag, S. ; Fichtner, W.

Author_Institution

Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1989

fDate

17-19 May 1989

Firstpage

106

Lastpage

110

Abstract

An overview is presented of the status of a project concerned with multidimensional numerical simulations, especially the three-dimensional simulation of complex semiconductor device structures. The authors summarize the major points of their approach to the important aspects of three-dimensional simulation, including grid generation and adaptation, the spatial discretization, and the numerical aspects of solving the nonlinear and linear systems of equations involved. Several typical results illustrate possible applications of this modeling tool

Keywords

semiconductor device models; simulation; 3D modelling; complex semiconductor device structures; grid adaptation; grid generation; linear equations; modeling tool; multidimensional numerical simulations; nonlinear equations; spatial discretization; three-dimensional simulation; Analytical models; Circuit simulation; Integrated circuit modeling; Iterative algorithms; Linear systems; Nonlinear equations; Numerical simulation; Semiconductor devices; Semiconductor process modeling; Software packages;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68593

Filename

68593