Lasing operation of ZnTe based yellow-green laser diodes

Author

Kikuchi, Akihiko ; Manoshiro, Asuka ; Nomura, Ichirou ; Kishino, Katsumi

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

25

Lastpage

26

Abstract

Current injection lasing operation of ZnTe based yellow-green light semiconductor laser diodes (LDs) with ZnCdTe active layer and MgZnSeTe cladding layers have been achieved, for the first time. The lasing characteristics were evaluated with a single pulse current injection mode at low temperature. The lowest threshold current density of the LD was 2.7 kA/cm² at 100 K. The maximum lasing temperature was 175 K and the observed lasing wavelength ranged from 564 to 576 nm

Keywords

II-VI semiconductors; cadmium compounds; claddings; magnesium compounds; selenium compounds; semiconductor lasers; zinc compounds; 100 K; 564 to 576 nm; MgZnSeTe; ZnCdTe; active layer; cladding layers; current injection; lasing operation; semiconductor laser diodes; yellow-green laser diodes; Diode lasers; Educational technology; Electrodes; Optical buffering; Optical superlattices; Quantum well devices; Substrates; Temperature dependence; Threshold current; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553040

Filename

1553040