• DocumentCode
    2699852
  • Title

    Effect of rapid thermal annealing on the properties of ZrBx (TiBx)-Si contacts

  • Author

    Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Milenin, V.V. ; Voitsikhovsky, D.I.

  • Author_Institution
    State Sci. & Res. Inst. Orion, Kiev, Ukraine
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    441
  • Lastpage
    444
  • Abstract
    We investigated heat tolerance of ZrBx-n-n+-Si and TiBx-n-n+-Si barrier contacts exposed to rapid (60 s) thermal annealing (RTA) in hydrogen atmosphere at T=400, 600, 800 and 950°C. Using XPS, AES and static I-V curve measurements, we have shown that ZrBx-n-n+-Si(TiBx-n-n+ -Si) contacts retain their layer structure and barrier properties after RTA at 950(600)°C
  • Keywords
    Auger electron spectra; Schottky barriers; X-ray photoelectron spectra; elemental semiconductors; rapid thermal annealing; silicon; titanium compounds; zirconium compounds; 400 C; 600 C; 800 C; 950 C; AES; Schottky barrier; TiB-Si; TiBx-Si contact; XPS; ZrB-Si; ZrBx-Si contact; heat tolerance; rapid thermal annealing; static I-V characteristics; Atmosphere; Chemical analysis; Conducting materials; Hydrogen; Rapid thermal annealing; Schottky barriers; Semiconductor films; Semiconductor materials; Substrates; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889540
  • Filename
    889540
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2699852