DocumentCode
2699869
Title
Modeling the subthreshold region of OTFTs
Author
Cerdeira, A. ; Estrada, M. ; Iñiguez, B. ; Soto, S.
Author_Institution
Dept. de Ing. Electr., CINVESTAV, Mexico City, Mexico
fYear
2011
fDate
26-28 Oct. 2011
Firstpage
1
Lastpage
4
Abstract
This paper presents the expressions and procedure for precise and simple modeling of the subthreshold region of OTFTs. The total drain current in the OTFT is calculated as the sum of two components, one calculated in above threshold regime plus the one corresponding to the below threshold regime. The tanh function is used to sew both regions. Good agreement between measured and modeled characteristics is shown in two OTFTs, one of tip pentacene and another of F8T2.
Keywords
organic field effect transistors; semiconductor device models; thin film transistors; OTFT; subthreshold region; Logic gates; Organic thin film transistors; Pentacene; Solid modeling; Temperature dependence; Voltage measurement; TFT; TFT modeling; organic TFT; polymeric TFT; subthreshold region modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering Computing Science and Automatic Control (CCE), 2011 8th International Conference on
Conference_Location
Merida City
Print_ISBN
978-1-4577-1011-7
Type
conf
DOI
10.1109/ICEEE.2011.6106681
Filename
6106681
Link To Document