The effect of heterojunction properties of the diode temperature sensors on low temperature current transfer and temperature response curves

Author

Shwarts, Yu.M. ; Kondrachuk, A.V. ; Shwarts, M.M. ; Spinar, L.I. ; Venger, E.F.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

fYear

2000

fDate

2000

Firstpage

453

Lastpage

456

Abstract

A new type of the silicon cryogenic diode temperature sensors (DTSs) with advanced technical characteristics has been developed on the base of highly doped n⁺⁺-p⁺ structures. For expansion of opportunities of the practical applications of the DTSs with the predicted performance characteristics we are experimentally and theoretically investigated the current transfer in the DTSs at helium temperatures. It is proposed that mechanisms of non-ohmic Mott´s conductivity in the base of diode and the tunnel-limited current through the heterojunction barrier between the n- and p-parts of the impurity band determine the current-voltage characteristics (CVCs) and the temperature response curves (TRCs) of the DTSs at helium temperatures

Keywords

elemental semiconductors; heavily doped semiconductors; hopping conduction; low-temperature techniques; p-n heterojunctions; semiconductor diodes; silicon; temperature sensors; tunnelling; Si; current-voltage characteristics; impurity band; low temperature current transfer; n-p heterojunction barrier; nonohmic Mott conductivity; silicon cryogenic diode temperature sensor; temperature response curve; tunnelling current; Conductivity; Cryogenics; Helium; Heterojunctions; Impurities; Physics; Semiconductor diodes; Silicon; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889543

Filename

889543